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TetraFET
D1034UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B A C E (2 pls)
K
1
2
3
4
F
G
8
J Typ.
7
6
5
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W - 28V - 500MHz PUSH-PULL
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
D M Q
P
I
N
O
H
* SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 13 dB MINIMUM
DD
PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (COMMON) DRAIN 2 SOURCE (COMMON) GATE 1 DIM A B C D E F G H I J K M N O P Q mm 9.14 12.70 45 6.86 0.76 9.78 19.05 4.19 3.17 1.52R 1.65R 16.51 22.86 0.13 6.35 10.77 PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 SOURCE (COMMON) GATE 2 SOURCE (COMMON) Tol. 0.005 0.005 5 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.025 0.005
Tol. 0.13 0.13 5 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.64 0.13
Inches 0.360 0.500 45 0.270 0.030 0.385 0.750 0.165 0.125 0.060R 0.065R 0.650 0.900 0.005 0.250 0.424
APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature
175W 70V 20V 10A -65 to 150C 200C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5387 Issue 1
D1034UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 80W VDS = 28V f = 500MHz IDQ = 0.8A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 2A 1 1.6 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70
Typ.
Max. Unit
V 2 1 7 mA A V S dB % -- 120 60 5 pF pF pF
VGS(th) Gate Threshold Voltage *
TOTAL DEVICE
VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
PER SIDE
VDS = 28V VDS = 28V VDS = 28V
* Pulse Test:
Pulse Duration = 300 s , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj-case Thermal Resistance Junction - Case Max. 1C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5387 Issue 1

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